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| Transys Electronics LIMITED SOT-89 Plastic-Encapsulate Transistors 2SB1424 FEATURES Power dissipation 2. COLLECTOR PCM: 600 mW (Tamb=25) 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current -3 A ICM: Collector-base voltage -20 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-50A, IE=0 Ic=-1mA, IB=0 IE=-50A, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-100mA IC=-2A, IB=-100mA VCE=-2V, IC=-500mA, f=100MHz VCB=-10V, IE=0, f=1MHz -20 -20 -6 -0.1 -0.1 120 390 -0.5 240 35 A A V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking Q 120-270 AEQ R 180-390 AER |
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